Specifications:

• Turbo pump vacuum system
• Process pressure 5-150 mbar
• Gas control system for pressure controle and gas mixtures
  Gasses; CHF₃, SF₆, O₂, Ar
• Max 300 W for Reactive Ion Etching (RIE)
• Max 300 W for Inductive Coupled Plasma (ICP)
• Independent control of ion energy
• Low damage
• Highly selective processing
• Uniform plasma etch
• Laser Interferometer endpoint detection
• Max sample area 90 mm diameter

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