With an electron beam a pattern is written in a photoresist layer. After exposure to this beam it is possible to selectively remove either exposed or non-exposed regions of the resist with chemicals thus creating nanotechnology structures.

Specifications:

• Sample size max. 100 x 100 mm
• Sample loadlock
• Laser-interferometer controlled stage with 2 nm position resolution
• Range x=100 by y=100mm z=30 mm
• Coarse fast movement with DC-motors within 0.2 micron
• Fine movement with piezos 8 micron travel nm resolution
• Beam energy 100 v – 30 kV
• Beam current 5 pA – 20 nA
• Apertures 7.5, 10, 20, 30, 60, 120 mµ
• Beam current drift <0.5% in 8 hours
• Beam position stability < 300 nm/h
• Beam size 2 nm at 20 kV
• Beam current density > 7500 A/cm²
• Electrostatic beam blanker 200 kHz 30 ns rise time
• 10 MHz Digital pattern generator
• 16 bit write field, size 0.5 mu to 2 mm
• 0.1 nm addressing increment
• Dwell time100 nsec – 500 msec minimum increment 1 ns
• Mark recognition gives overlay accuracy of 40 nm
• Write field stitching 40 nm
• GDSII format viewer and editor
• Import AutoCAD DXF, ASCII or CIF format converted to GDSII
• Minimum feature size 20 nm in high resolution positive resist

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